RADIATION EFFECTS ON THIN-FILM INTEGRATED CIRCUIT ELEMENTS.

摘要

Efforts were directed toward (1) an experimental determination of the differences in the charge change induced by 600kV FXR and 2MV FXR irradiations, 18MeV LINAC electron,and bremsstrahlung from 18MeV electrons; (2) the dependence of the radiation induced charge change on substrate thickness for thicknesses near the range of the most energetic Compton electrons,and (3) the effectiveness of a guard ring in limiting the charge change which is neutralized by a circular disc conductor. The experiments performed in each of the above areas are described and the resulting data presented. The presented data shows that (1) charge change is a decreasing function of incident radiation energy, (2) induced charge change decreased with decreasing substrate thickness within the thickness range of 0.0005inch