Electrical Transport Properties of Thin Bismuth Films

摘要

Bismuth films with a well-ordered but twinned crystal structure were grown by slow vacuum deposition (100 A/min) onto heated mica substrates (160C) in ultra-high vacuum 5 x 10 to the - 9th power) followed by annealing at 160 C for 1/2 hour. The resistivity and Hall coefficient of these films with thicknesses between 700 and 37,000 A were measured between 1.15 and 300 K while the magnetoresistance coefficient was measured at 1.15, 4.2, 77 and 300 K. It was found that the surface scattering of the charge carriers in these films is not specular, contrary to the findings of other workers. Quantum size effect oscillations were observed in all the transport properties of the thinnest films at low temperatures.