The Electrical Switching Properties of Amorphous Bismuth Trioxide Thin Film Devices

摘要

Many gold-amorphous bismuth trioxide-gold layered devices, known as Bi-O-Trons were fabricated and their switching properties were investigated. The Bi-O-Trons were made by direct vacuum deposition. A unique microprocessor controlled measurement method was developed. This report also contains evidence that filaments can be formed by exclusively thermal effects. Also, evidence that suggests an electrothermal model of threshold switching is presented and discussed. Finally a conclusion about the possibility of the immediate application of Bi-O-Trons as memory cells is presented. (Author)