Results of Studying the Process of Film Deposition of Elements from Their Organic and Carbonyl Compounds under the Influence of an Electron Beam

摘要

Electron beam deposition was used to produce tin and silicon films from their organometallic compounds, and molybdenum carbide films from molybdenum hexacarbonyl. The apparatus used provided an electron-beam current density. The chamber was evacuated before introduction of the organic compound, which again raised the pressure. Tin was deposited on a substrate and heated to 80-200C by an electron flux to yield film. Growth rates of silicon films as functions of current density, substrate temperature, electron energy, and vapor pressure are plotted. Molybdenum carbide deposition was carried out over a substrate temperature range of minus 25-300C at current densities of 0.1-1.2 mA/sq cm. Film growth rates are plotted for these ranges. A brief theoretical treatment of film growth rate is also given and there is good agreement with experimental data. Interferometer measurement of film thickness was accurate. (Author)