Electron Damage in In2Te3 - A Defect Tetrahedral Semiconductor.

摘要

Indium sesquitelluride (In2Te3) is typical of a large class of defect semiconductors which are tetrahedrally bonded but which possess room temperature vacancy concentrations of the order of 5.5x10 to the 21st power/cc. It has been proposed that these semiconductors can not preserve non-equilibrium point defect concentrations. This hypothesis has been tested in the present experiments by electron irradiating In2Te3 at 77 K with 1 MeV electrons and using electron paramagnetic resonance (EPR) to observe the results.