Donor Impurity Surface States in Semiconductors.

摘要

The goals of this research were to use ESR as a tool to elucidate on the nature and properties of donor surface states,and also to use ESR signals to determine details in semiconductor surface structure. Germanium doped with antimony was chosen as the most interesting donor-semiconductor system for study and a major effort was invested in this system. Another project involved ESR studies on the ion implanted surface layer in silicon. The purpose of this research was to investigate in detail the structural transformation from the crystalline to the amorphous state in the surface layer as a result of the ion implantation.