Electron Beam Evaporated Aluminum Oxide Gate Silicon Transistors.

摘要

Aluminum oxide films prepared by the electron beam evaporation of Al2O3tablets were studied in metal-insulator-semiconductor devices. The structure of Al2O3films is amorphous with a density of 2.25gm/cc. The film conductivity is smaller than 5 x 10to the 14th power (ohm-cm) and the breakdown strength is higher than 1,300,000 V/cm. The average relative dielectric constant is about 7. The interface surface states of the MIS sample are small in the middle of the forbidden band,gradually increasing toward the band edges. The MIS devices have interface surface state densities larger than 3.4 x 10to the 10th power states/sq cm. Both n-and p-channel MOSFETs with electron beam evaporated Al2O3as the gate insulator were fabricated successfully. The n-channel MOSFET has an average threshold voltage of -2.3volts and an average channel mobility of 207sq cm/V-sec. The p-channel MOSFET has an average threshold voltage of -1.5volts and an average channel mobility of 103.5sq cm/V-sec. The radiation resistance of the fabricated n-and p-channel MOSFETs was tested with neutrons,gamma rays,and electrons. (Modified author abstract)