Research on the Preparation and Properties of Semiconductor Compounds as Aluminum Antimonide.

摘要

New semiconductors with improved properties are required for both gamma radiation detectors and solar cells. Aluminum antimonide qualifies as a candidate material for both devices,but at the present time it is not developed for usage. Basic investigations of purification,Czochralski and LEC-modified crystal growth,vacuum baking of aluminum,passivation,doping,ion implantation,and p-n junction formation were studied in this research. Methods of processing were developed,including atmospheric control,cutting,polishing,lapping,etching,and electrical contacting specifically required for AlSb. X-ray orientation and mass spectrographic analyses,as well as electrical analyses,were conducted on representative crystals. Majority carrier transport characteristics versus temperature and optical density on first,second,and third generation growth crystals were determined. The formation of p-n junctions using grown junction techniques was accomplished. (Author)