Ion Implantation in Semi-Conductors and Semi-Insulators.

摘要

Ion implantation of II-VI semiconductors offers numerous possibilities for the fabrication of electronic devices. Several possibilities have been explored and are reported here. The electrical and optical properties of ion-implanted ZnSe and ZnS are reported and their suitability as surface contact injection devices, p-n junctions and light emitting diodes is discussed. The suitability of these materials for switching and memory devices is also discussed. The results of ion implantation are compared with the behavior of doped samples. The methods of material preparation are carefully considered and related to the experimental data. An experiment to measure the laser-induced absorption of II-VI compounds is discussed. Most of this discussion concerns the setup of the experiment and a mathematical analysis of the response times anticipated. The thermoluminescence of Br-implanted ZnS is compared with the behavior of Br-doped and pure samples of ZnS. Several methods for determining the regularity and depth of the implanted layers are described. (Author)