METHOD OF MANUFACTURING A SEMI-CONDUCTOR DEVICE EMPLOYING SEMI-CONDUCTOR TO SEMI-INSULATOR CONVERSION BY ION IMPLANTATION

摘要

ABSTRACT OF THE DISCLOSUREAn oxygen or nitrogen ion beam is implanted into apolycrystalline silicon or in an amorphous silicon layer, ora single crystal device body or layer, on a semiconductorsubstrate to an extent sufficient to convert the polycrystallinesilicon layer, the amorphous layer or the single crystaldevice body or layer into a semi-insulating layer having aresistivity of 107 to 1011 ohm-cm, which has improvedpassivation property.