首页> 美国政府科技报告 >Cluster Model for Lattice Distortion Effects on Electronic Structure: VO and VO2.
【24h】

Cluster Model for Lattice Distortion Effects on Electronic Structure: VO and VO2.

机译:格子畸变对电子结构影响的聚类模型:VO和VO2。

获取原文

摘要

Molecular cluster predictions for electronic energy levels, wave functions, momentum densities, and Compton profiles of VO and VO2 are examined within the Hatree-Fock-Slater model. V06 clusters are treated in O(h), D(4h), and D(2h) symmetry to obtain quantitative relations between distortion parmeters and level shifts and splittings. Effects of the crystal environment are taken into account by a potential field. The results for VO are consistent with the augmented plane-wave band calculation of Mattheiss and x-ray emission data; the VO2 levels are in good agreement with x-ray photoelectron spectroscopy data. A sizable anisotropy is predicted for the Compton profile of VO and V02.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号