Concentration Profiles of Recombination Centers in Semiconductor Junctions Evaluated from Capacitance Transients.

摘要

The effect of stationary charges trapped in the region near the p-n boundary and in the edge region of a semiconductor junction space-charge layer on the evaluation of the concentration profiles of the recombination centers as well as doping inpurities, from high-frequency capacitance transient data, is studied. Both the theory, its simplification for junctions with low concentration of recombination centers, and two experimental examples are given to illustrate the importance of the edge effect. One of the examples is an aluminum on n-Si Schottky diode with a very low concentration of process-induced donor trap, and the other is a phosphorus and gold diffused diode with a gold concentration about 20 percent of the boron concentration. (Author)