Amphoteric Dopants in the Active Region of GaAs Lasers.

摘要

Double heterojunction lasers were fabricated with Ge and Si in the active region. Spontaneous diodes were fabricated with and without Si and diodes without Si exhibited a shorter wavelength spectral peak by about 9meV. Diodes with Te compensation were similar to diodes without compensation. The lasers had a characteristic spectral peak at approximately 9000 A. The best quantum efficiency (incremental) measured was approximately 22percent (0.32watts/amp). This form of doping in the active region appears to produce diodes which are very favorable with respect to threshold current. Towards the end of the activity a laser wafer was obtained with the same configuration except with Te in lieu of Si as the compensating impurity.