Multiphonon Raman Scattering in Si and AlAs.

摘要

Resonance Raman scattering in semiconductors with indirect band gaps has been investigated in order to manifest the contribution of the iterative electron-one phonon process to second-order Raman scattering. The authors have searched without success for Raman peaks associated with intervalley scattering among multivalleys. Three- and four-phonon features in Si and AlAs have been observed and are compared with the two-phonon scattering strength.