Susceptibility of UHF RF Transistors to High Power UHF Signals -Part II.

摘要

This report describes Part II of a program initiated to determine what effects high power UHF/microwave signals have upon solid state components, such as transistors used in RF amplifier stages of high power receivers. The electromagnetic vulnerability (EMV) data needed involves determining the effects of high power 240 MHz RF microsecond single pulse signals upon those transistors. Testing was performed using 2N5179 and 2N918 transistors. A study was made to determine the incident pulse powers required to cause a 50% failure rate. The data suggest that UHF receivers with an RF transistor amplifier front end may be as susceptible to intense electromagnetic radiation (EMR) at UHF frequencies as those with a mixer diode front end.