Power amplifier with MESFET transistors, and its power supply unit, especially for amplifying UHF signals on board a satellite

摘要

The power supply (32-43) provides a MESFET power amplifier with the necessary operating voltages, particularly a MESFET drain DC voltage (Vdd). It comprises: a temperature-sensitive component (14; 20), placed next to the MESFET transistor(s) so that it is affected by the temperature of the latter; and means (13; 19) controlled by a parameter provided by the said temperature-sensitive component for varying the drain DC voltage in the same direction as the temperature variation. In this way, antagonistic amplifier output gain and power variation according to temperature is compensated by altering the drain DC voltage, even in saturation conditions.