Luminescence and Hall Effect of Ion Implanted Layers in ZnO.

摘要

An experimental investigation was conducted on implanted layers of Li, Na, N, P, and Ne in ZnO substrates. The primary experimental method used was cathodoluminescence, and it was found that it was possible to probe an implanted layer by varying the beam voltage of the exciting electrons. A comparison of calculated implantation profiles with semi-quantitative electron profiles showed that fair agreement existed between these theoretical profiles and the depth-resolved cathodoluminescence results. The electrical properties of the implanted layers were obtained using the van der Pauw technique, and a photoluminescence system incorporating a nitrogen laser was used to perform time-resolved spectroscopy. Optical evidence of a shallow acceptor center in ZnO was revealed for the first time in the cathodoluminescent spectra obtained from implanted samples of ZnO, however, no evidence of type conversion and pn-junction formation was found in the electrical measurements. Cathodoluminescence was obtained over a temperature range of 10 to 300 K and the electrical properties were measured between 77 K and 373 K. Photoluminescence was recorded using sample temperatures in the range 4.2 to 300 K. (Author)