Development of Apparatus for Performing Rapid Capacitance-Voltage Measurements on MIS Structures.

摘要

This report discusses the design of a complete experimental system for the observation of radiation effects in metal-insulator-semiconductor (MIS) capacitors by use of a rapid, repetitive capacitance-voltage (C-V) measurement technique. The apparatus includes trigger and control-signal generators, bias voltage sources, a sample holder with temperature control and radiation dosimetry, and a high-speed sample capacitance monitor. In typical operation, this apparatus repetitively measures the C-V characteristics of an MIS capacitor at intervals spaced logarithically in time from 0.1 ms to 800 s, after a radiation pulse. Characteristics and operating principles of the major system components are discussed and sample test results are presented. (author)