Perturbation of Electronic Structure of Insulators by Interfaces and Defect.

摘要

Extending the theory which developed by Kohn, Onffroy and Rehr for a one-dimensional non-periodic system, the authors have developed a theory that describes how the electronic density distribution near an insulator-insulator interface approaches the bulk behavior. The exponential decay constant depends on the band structure of the two insulators and the positions of localized surface state energies. In addition, the authors also study the behavior of the electron density perturbation due to a defect across several successive interfaces. (Author)