Photovoltage Characterization of MOS Capacitors.

摘要

Surface photovoltage, capacitance and conductance measurements have been made on various metal-oxide-semi-conductor (MOS) capacitors fabricated on p-type Si wafers. Curves of photovoltage plotted against dc sample bias are found to exhibit structure arising from surface state effects which correlates well with that observed in the C-V/G-V curves. In the region near the middle of the Si bandgap the surface state density can be reduced by about an order of magnitude by annealing. An equivalent circuit approach is used to relate the photovoltage to the electrical parameters. (Author)