Time-Resolved Raman Scattering and Transmission Measurements during Pulsed Laser Annealing

摘要

Raman scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystalization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 + or - 200 C. Time-resolved transmission measurements at lambda = 1.15 microns also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed. (Author)