Worst-Case Prediction of Single-Particle-Induced Permanent Failures in Microelectronics

摘要

In recent years upsets caused by single particles passing through Si integrated circuits have been a serious concern in the semiconductor industry. In this report we calculate the threshold voltage shift caused by a single charged particle passing through the SiO2 layer of a metal-oxide-semiconductor field-effect transistor. This calculation rests on a number of worst-case assumptions: (1) recombination is neglected, (2) charge trapping is taken to be 100-percent efficient, and (3) maximum energy loss per unit path length is assumed. Under these conditions we calculate that permanent failure caused by a single alpha particle is possible in submicrometer-dimension devices. (Author)