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I/J Band Low-Cost Crossed-Field Amplifier

机译:I / J频段低成本交叉场放大器

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摘要

This program is directed toward development of an I/J band, linear format, injected-beam crossed-field amplifier (IBCFA) for electronic warfare. The IBCFA should be capable of power output of 1000W peak, 200W average, between 8.5 and 17 GHz with 20dB gain. A laser-cut shaped-substrate meander line is used. The performance objectives for E/F band CFAs include 3kW peak pulse power output and 1kW average power output, 20dB gain, 2-4GHz, for electronic warfare; and 2kW peak pulse power output at 10-15% duty, 25dB gain, 3.0 to 3.6 GHz, for phased-array radar. The first E/F band tube built on this contract showed performance at low duty substantially like the previous CFA built with a laser-cut substrate when tested under electronic warfare conditions, and in addition performed well at 33% duty. For the phased array conditions, gain was too low. A second E/F band tube, built with a longer circuit to increase gain, failed when the substrate cracked and separated from the ground plane. An I/J band tube was built and tested. The sequence of construction of the circuit with laser cut substrate was revised to reduce breakage, and was demonstrated successfully. However, performance was poor primarily because of excessive RF losses in the circuit.

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