Microscopic Processes at the Gas-Solid Interface of Compound Semiconductors

摘要

The Original goal of this research was the study of microscopic processes at the surface of compound semiconductors. This effort developed in three major directions. Firstly, the atomic geometry of a number of III-V and II-VI compound surfaces has been studied via Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). Although this study is still in process, a trend in surface reconstruction versus crystal bonding ionicity is likely to emerge. Secondly, we have studied the structural effects of the gas-semiconductor (in particular oxygen-GaAs(110) interaction and have concluded to the formation of a thin amorphous layer (probably oxide) covering an ideally terminated periodic lattice. Finally, we have thoroughly studied the formation and structure of a thin metal (Al) overlayer on a semiconductor compound (GaAs(110)) and present a detailed analysis of the structure of a growing AlAs compound at the interface.