Semiconductor Surface Characterization Using Transverse Acoustoelectric Voltage versus Voltage Measurements

摘要

An alternative to Capacitance-Voltage (C-V) measurement is experimentally demonstrated. This technique measures the Transverse Acoustoelectric Voltage (TAV) as a function of applied D.C. voltage across the semiconductor. The technique is nondestructive and is applied to uniformly doped Si samples. Surface properties such as the flat band voltage, oxide charge and the zero bias surface condition are determined. P.S. An annual interim report is being accepted as the Final report for AFOSR-77-3426. The technical effort is being continued for one year under AFOSR-82-0281. The Final report for this continuation will contain more overall detail and should be considered as the final report for the entire technical effort. (Author)