Computer Modeling of Millimeter-Wave Impatt Diodes. One of a Series of Reports on Millimeter-Wave Circuit Analysis and Synthesis.

摘要

A model of millimeter-wave Si IMPATTs has been developed which includes transient transport effects neglected in the conventional drift-diffusion model. The new model is based on principles of energy and momentum conservation. The model uses the first three velocity moments of the phase-space transport equation. Terms accounting for the effects of collisions incorporate energy dependent relaxation times and ionization rates.