Study of Flicker Noise and Hot Electron Noise in JFETs, MOSFETs and Related Devices

摘要

1/f noise in unimplanted MOSFETs is also of the number fluctuations type. 1/f noise in JFETs is so small that it is almost unobservable. 1/f noise in buried channel MOSFETs is smaller than in diffused MOSFETs. Hot electron noise was observed in buried channel MOSFETs and in short channel JFETs. In the latter case it si masked by generation-combination noise due to partly ionized donors below 120 K. Low-frequency noise in GaAs current limiters is one-dimensional diffusion noise governed by an activation energy that is voltage dependent. Modulation-doped GaAs FETs (HEMTs) have a sizeable amount of 1/f noise, probably of the number fluctuations type and thermal noise at higher frequencies. Short n(+)-n(-)-n(+) GaAs diodes have a linear characteristic, higher frequencies. The high-frequency behavior of short n(+)-n(-)-n(+)GaAs diodes and of short n(+)-n(-)-grid-n(-)-n(+) solid state diodes was estimated; picosecond electronics seems feasible.