Oxygen in Zone-Melting-Recrystallized Silicon-on-Insulator Films: Its Distribution and Possible Role in Sub-Boundary Formation.

摘要

Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers.