Summary Abstract: Thermally Activated Etching of InP Substrates for MOCVD (Metalorganic Chemical Vapor Deposition)

摘要

The growth of InP and In0.53 Ga0.47 As epitaxial layers on single crystal InP substrates has recently been demonstrated by a variety of metalorganic chemical vapor deposition (MOCVD) techniques. The MOCVD techniques have the common characteristic that reactant vapors are transported in a cold-wall the reactor on which the substrate sits. The reactant gas species are useful only for epilayer growth and if gas-phase etching is desired, it must be performed with some specific etchant vapor. Anhydrous HC1 has been used for InP substrate etching, however, it is difficult to control, and its corrosive properties make safe handling difficult. This paper describes an alternative vapor etchant that is much more amenable to control and handling. A vapor etch study of InP has been performed in a MOCVD reactor using ethylene dibromide (EDB, or 1,2-dibromoethane) as an etchant.