Resonance Raman Scattering and Fast Time-Resolved Spectroscopy of Impurity Levels in III-V Semiconductor Alloys

摘要

We have performed experimental and theoretical studies of the electronic, vibrational, and kinetic properties of electronic bound states in III-V, and silicon- and germanium-based semiconducting materials. This has included new CVD growth of crystals and thin-films and an advanced program of high-pressure (diamond anvil cell) techniques. Electronic states investigated have included intrinsic and defect-induced levels lying near or within the gap of the host materials. Experiments have involved (1) photoluminescence (PL) (2) PL-excitation (PLE) (3) visible- and infrared-absorption (4) resonant PL and Raman scattering and (5) subnanosecond time-resolved luminescence performed at a variety of temperatures and hydrostatic pressures. Defects were selected for their 'model' properties in a family of hosts and have included isoelectronic deep traps and resonances, shallow and deep simple donors and acceptors, and native-defect and impurity complexes incorporated during crystal growth or by implantation and annealing or diffusion.