Plasma-Enhanced Chemical Vapor Deposition of Metal and Metal Silicide Films

摘要

Plasma-enhanced CVD (PECVD) has been widely used for the deposition of insulating and semiconducting thin films. In recent years, interest has arisen in the use of PECVD to form metal layers for barrier, contact, and interconnect applications. Plasma deposition conditions that result in the formation of conducting films of transition metals, transition metal silicides, and transition metal nitrides are discussed. Particular attention is given to the as deposited resistivities of these films, and their relationship to the gas phase reactants. The effects of post-depositon heat treatments are discussed. (Author)