Analysis of Solid State Plasma Formation in Semiconductor Components

摘要

A study is performed to determine the physical mechanism responsible for the destruction of semiconductor components exposed to intense optical or electric fields. This paper suggests that solid state plasma formation is the responsible mechanism. Proof is provided via theoretical analysis and experimental data to show solid state plasma formation comes about due to the quantum mechanical aspects of semiconductors. To capitalize on this thesis, work began to construct an ensemble Monte Carlo program to model plasma effects under intense optical or electrical illumination in four semiconductor materials. Keywords: Solid state plasma; Failure mechanisms; Semiconductor.