Hall Effect Measurement in the Diamond Anvil High-Pressure Cell

摘要

Hall effect measurements have been carried out in the diamond anvil cell to pressure of 6 GPa. A plasma sprayed coating has been used to insulate the electrical leads from the gasket, but a van der Pauw geometry was used to make the Hall and mobility measurements. Application of the technique to GaAs at 300 K is described, for which the T-X conduction band crossover is observed at 4.0 GPa, in good agreement with recent photoluminescence measurements.