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Poly(aryline imides) as E-Beam Resist: Sensitivity and Resolution

机译:聚(芳基酰亚胺)作为电子束抗蚀剂:灵敏度和分辨率

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Polymeric acids synthesized for di-trifluoromethyl methyl bis(phthalic anhydride) and 4,4'-diaminophenyl sulfone (F-1) and 4,4'-diaminophenyl ether (F-4) were found to have excellent negative E beam resist properties. The best materials contain about 90% imidized structural units having sensitivities of 1.5 to 2.5 micro/aq. cm. and contrast of 1.0 to 1.3. Polyamic acid of pyromellitic dianhydride and 4,4'-diaminophenyl sulfone (P-1) imidized to 97% exhibits useful positive E-beam resist properties. Radiation induces imidization and chain scission to alter the solubility of the resist polymers resulting in the formation of latent images. Imides, Aryl radicals. (mjm)

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