Time-Resolved Hot Electron Transport in Electronic Devices

摘要

The size of microelectronic devices is becoming increasingly small and they are operating at higher and higher frequencies up to and exceeding 100 GHz. Their performance and operation depends to a large extent on their carrier transport. Due to fast time variations and strong spatial nonuniformities, the electrons can not be considered classical anymore. The basic Einstein and Nyquist relations are not valid, the transport is not ohmic and the carriers are called hot electrons. The study of the hot-electron transport is of fundamental importance since it is prevailing in modern devices. It was the goal of the contract to directly study by means of femtosecond techniques the nonsteady-state transport of hot electrons in bulk or layered semiconductors. Hot electron transport, Velocity overshoot, Resonant tunneling diode, Quantum well tunneling, Time resolved photoluminescence, Subpicosecond absorption spectroscopy. (mjm)