Enhanced and Quenched Raman Scattering by Interface Phonons in Semiconductor Superlattices: What are the Defects

摘要

We report on the magnetic field and power density dependences of resonant Raman scattering by interface phonons in GaAs-A1(x)Ga(1-x)As superlattices. Strong photoexcitation leads to quenching of the nominally forbidden (and sample-dependent) scattering while a dramatic enhancement of the intensity is observed in the presence of a magnetic field. Alternative mechanisms that partially account for the experimental findings are discussed. Keywords: Vibration, Electrostatic potential, Crystal defects, Backscattering. Reprints. (AW)