Reliability Prediction Models for Discrete Semiconductor Devices

摘要

The objective of this study was to update and revise the failure rate prediction models for discrete semiconductor devices currently in Section 5.1.3 of Mil-Hdbk-217e, Reliability Prediction of Electronic Equipment. GaAs Power FETS, Transient Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator Devices. The proposed prediction models provide the ability to predict total device failure rate (both catastrophic and drift) for all military environments for both operating and non-operating modes. The updated models are formatted to be compatible with MIL-HDBK-217E and are included as an appendix to the Final Technical Report. Significant factors found to influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application, application environment, package type and screen class. Keywords include: Reliability, Failure rate, MIL-HDBK-217, Discrete semiconductor, Diode, Transistor, Thyristor, Opto-electronic, and Microwave transistor. (rh)