Digital Deep Level Transient Spectroscopy Considered for Discrimination of Traps Closely Spaced in Emission Coefficients in Semiconductors

摘要

A method is presented for analysis of digitally recorded capacitance transients to give activation energies and capture cross-sections of two deep levels which would yield over-lapping peaks in conventional DLTS spectra. It is shown that baseline errors can be overcome by proper analysis of the data. The accuracy of the method is examined by simulation with parameters representative of a typical DLTS system. The addition of various noise levels is also simulated and the effects of averaging of transients on the ability to discriminate closely spaced traps is examined quantitatively. Keywords: Gallium arsenides, Reprints. (AW)