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Zeeman Splitting of Double-Donor Spin-Triplet Levels in Silicon

机译:塞曼对硅中双供体自旋三重态的分裂

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Observation of the Zeeman effect has confirmed the identification of spin-triplet terms for double donors in silicon. The isotropic splitting of an absorption line at 2146.38/cm in Silicon:Selenium O, and of the corresponding line at 1218.37/cm in Silicon:Tellurium O, into two sigma components and one pi component is consistent with their identification with the rho=1 spin-orbit level of the 1s (A1)1s(T2) configuration's 3T2 spin-triplet term. An experimental splitting factor g rho of this line equal to 1.0 for both systems agrees with the theory of Lande' g factors when the orbital g factor g equals zero as predicted by effective mass theory. The spin-orbit interaction parameter determined from a nonlinear component in the Zeeman splitting predicts a ratio of singlet and triplet absorption strengths which agrees with the observed ratio to within a factor of 2 for Silicon: Tellurium but only to within a factor of 3 for Silicon: Selenium. Reprints, Silicon. (MJM)

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