Use of RADFETS (Radiation-Sensitive Field Effect Transistor) in Radiation Dose Measurement: Report on Three Lots Prepared for the U.S. Army.

摘要

The final report describes the preparation of experimental RADFET dosimeters prepared by REM, a UK firm. Samples were delivered to the US Army for testing. The object was the evaluation of the Radiation - Sensitive Field Effect Transistor (RADFET) for use in tactical dosimetry systems. Three lots of the new Type TOT500 quadruple - transistor RADFET design were prepared and preliminary evaluations of each lot were made in the UK. A dose range of 5 to 5000 rads (0.05 to 50 Gy) is predicted. Special ceramic packages with a reduced amount of gold in the cavity were used. The zero bias mode, which eliminates batteries from tactical dosimeters, was proved to be useful. The prospects of the RADFET as a practical dosimeter look encouraging. Keywords: Silicon; Metal-oxide-semiconductor (MOS); Field effect transistor (FET); Silicon dioxide; Space charge; Gamma rays. (kt)