Numerical Modeling of Two-Terminal Quantum Well Devices

摘要

This report discusses in detail the results of a Phase I investigation of aluminum gallium arsenide/gallium arsenide resonant tunneling devices (RTD) using the moment representation of the density matrix equation and the concept of a quantum potential. One dimensional numerical simulations of the density matrix equation (i.e., continuity and momentum-balance equations) and the Poisson's equation were performed. Our study constitutes the first attempt to solve numerically the moments of the density matrix equation. Our numerical simulations, while including the effect of momentum relaxation, show the occurrence of negative differential for a variety of RTD, with different barrier/well thicknesses and heights. The influence of the doping profile throughout the entire device on the current-voltage characteristics was also investigated. Additionally, we have studied the rectifying characteristic of the I-V curve of an asymmetric RTD (with different barrier heights), an interesting feature with potential device applications. (kr)