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Quantum Hall conductance of two-terminal graphene devices

机译:两端石墨烯器件的量子霍尔电导

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摘要

Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, in particular, we analyze the distortions of quantum Hall plateaus and the conductance peaks and dips at the charge-neutrality point, which can be used to identify the incompressible densities. These results are compared to recent theory and possible origins of the discrepancy are discussed.
机译:比较了单层和双层石墨烯在霍尔效应中的两端电导率的测量和理论。我们研究了电导随栅极电压变化的特征,这些特征可以区分单层,双层和带隙样品,尤其是,我们分析了量子霍尔高原的畸变以及电荷中性点处的电导峰和谷,这可以用于识别不可压缩的密度。将这些结果与最新理论进行了比较,并讨论了差异的可能根源。

著录项

  • 来源
    《Physical review》 |2009年第4期|045408.1-045408.7|共7页
  • 作者单位

    School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA;

    Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

    Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA Department of Applied Physics. Yale University, New Haven, Connecticut 06520, USA;

    Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA;

    Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    fullerenes and related materials; theory and modeling;

    机译:富勒烯及相关物质;理论与建模;

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