Scaleable Process for CVD of Large-Area Heteroepitaxial Beta SiC on TiC(x) Using Gases with 1:1 Silicon to Carbon Stoichiometry

摘要

Diamond Materials Institute, Inc. has demonstrated that single phase Beta-SiC films can be reliably deposited on TiC substrates using novel source gases with a 1:1 Si;C stoichiometry. In particular, DMI has demonstrated the growth of Beta-SiC from methylsilane + ethylene + hydrogen mixtures and from methyl trichlorosilane + hydrogen mixtures. In addition, DMI has demonstrated heteroepitaxial growth of monocrystalline Beta-SiC from mixtures of methyl trichlorosilane + hydrogen. Heteroepitaxial growth of Beta-SiC was demonstrated on a monocrystalline substrate of composition 95 mole % TiC + 5 mole % VC. The presence of 5% VC in TiC did not adversely affect the heteroepitaxial growth of Beta-SiC. Heteroepitaxy, TiC, Stoichiometry, Lattice, thermal expansion, Beta silicon carbide. (jes)