Failure Mechanisms of GaAs Transistors - A Literature Survey.

摘要

This report is a summary of information from a literature survey of GaAs component failure modes. A brief outlook on GaAs material and techniques used in fabrication of GaAs devices is included. Failure modes common to GaAs MESFET's are discussed excluding modes common to Si components such as metal migration and intermetallic formation. As the same failure modes seen in discrete MESFET's will occur in MMIC and digital GaAs devices, the discussion does not include these devices per se. Side-gating or backgating problems seem to be material or design related and therefore are not treated as failure modes. Besides the interaction of metal and GaAs in ohmic contact areas, the importance of the quality of the GaAs surface in the reliability of GaAs components is discussed. Also discussed is the relation of free As on the surface to both long and short term failure modes. (jes)