Nonvariational Numerical Calculations of Excitonic Properties in Quantum Wells inthe Presence of Strain, Electric Fields, and Free Carriers

摘要

This reprint describes the properties of effective-mass in quantum wells in thepresence of strain, transverse electric fields, and free carriers using a nonvariational numerical technique. The technique allow us to avoid the use of a prechosen form for the excitonic wave function and can be applied to arbitrarily shaped quantum wells with external perturbation. The valence band within the effective-mass approximation uses a 4 x 4 f.p Hamiltonian which neglects the split-off band; The conduction band is assumed to be parabolic. Results are presented for excitation binding energies, wave functions, and oscillator strengths.