Evaluation of Phenolic Resists for 193-nm Surface Imaging

摘要

A variety of novolac-based polymers and blends with photoactive compounds werestudied for their suitability as resists in a 193-nm positive-tone silylation process. The addition of photoactive compound was found to reduce the sensitivity of the resist and to hinder the diffusion of the silylating agent. Pure meta-cresol novolacs and polyvinylphenols, both of which can be polymerized to high molecular weights show the best sensitivity for this process. Diffusion rates correlate with the molar volume of the silylating agent, although the activation energy does not. Resolution of 0.2 microns line-and-space gratings has been achieved with the polyvinylphenol and meta-cresol novolac resins.