Systematics of Secondary-Ion-Mass Spectrometry Relative Sensitivity Factorsversus Electron Affinity and Ionization Potential for a Variety of Matrics Determined from Implanted Standards of More than 70 Elements

摘要

We have measured and plotted the dependence of secondary-ion-mass spectrometry(SIMS) relative sensitivity factor (RSF) on electron affinity and ionization potential of up to 74 elements implanted into 23 materials, measured using oxygen-ion bombardment and positive SIMS, and cesium-ion bombardment and negative SIMS. Reproducibility of plus or minus 60% in RSF has been demonstrated for many of these implanted standards over a period of 8 years in several Cameca magnetic sector instruments, especially in Si, GaAs, and HgCdTe matrices. More recently, reproducibilities of plus or minus 20%-30% have been achieved using more controlled experimental techniques. Similarities among plots of logRSF versus ionization potential or electron affinity have been found for a variety of semiconductor, metal, and insulator matrices. Universal patterns and trends are observed for oxygen bombardment and positive SIMS, and for cesium bombardment and negative SMIS. Four major regions regions are seen in the dependence of logRSF on ionization potential, one with possibly three branches with slightly differing slopes, that are characterized by elements from various groups of the periodic table.