Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2

摘要

In this research we demonstrate an ellipsometry technique that is sensitive tothe interfacial region between a dielectric film and substrate. Essentially, a film and substrate is immersed in a liquid that index matches to the film, thereby optically removing the film from the measurement. In addition, the use of spectroscopic and multiple angles of incidence ellipsometry provides sufficient specification of the interface parameters which along with the enhanced sensitivity to the interface, enables the optical measurement of the interfacial properties. Theoretical and experimental verification is provided along with application to the Si-SiO2 interface.