International Conference on Defects in Semiconductors (16th) Held in Bethlehem, Pennsylvania on July 22 - 26, 1991.

摘要

This report consists of the abstracts for the 16th International Conference on Defects in Semiconductors held at Lehigh University, Bethlehem, PA on July 22-26, 1991. Approximately 250 papers were presented. This meeting addressed the fundamental science of imperfection in semiconductor materials. A wide range of defects of both fundamental and technological interest that include native defects, impurities, dislocations,and defects at surfaces and interfaces in variety of semiconductor materials (Si, Ge, diamond, III-V and II-VI compounds, and related alloys) were discussed. Properties of interest included defect structures (atomic and electronic), defect introduction, reactions, motion, electrical and optical characteristics, etc. The following are a few examples of recent work that is breaking new ground in the field: (1) Oxygen in GaAs has been identify recently and has metastable characteristics. (2) After many years of effort, There has been progress in the doping of II-VI materials.