SiC Microsensor with Piezoresistive Diamond Sensing Elements

摘要

Advanced microfabrication processes have been developed for novel hightemperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following: (a) Growth of polycrystalline diamond on Beta-SiC substrates. (b) The first isolated p-type diamond resistive elements grown on intrinsic diamond. (c) Establishment of microfabrication processes for sensor manufacture. (d) Demonstration of a large piezoresistive effect in poly-diamond. (e) Demonstration of a new field-assisted-bonding process which allows dielectrically isolated SiC elements to be formed.